Signal and noise improvement of a distributed FET mixer

Author

Moradi, Gholamreza ; Abdipour, Abdolali ; Farzaneh, Forouhar

Author_Institution

Instructor of Civil Aviation Technol. Coll., Mehrabad Int´´l Airport, Tehran, Iran

fYear

2002

fDate

18-19 Nov. 2002

Firstpage

284

Lastpage

288

Abstract

A traveling wave distributed mixer is studied. It is shown that increasing the drain-source capacitances in a distributed FET mixer simultaneously improves its conversion gain and noise figure. Besides, it is shown that proper loading of input and output elements can improve the device performance. The simulation results are well matched with the measurements and also with the results of the existing certified simulators.

Keywords

HEMT integrated circuits; MMIC mixers; circuit simulation; field effect MIMIC; integrated circuit design; integrated circuit modelling; integrated circuit noise; millimetre wave mixers; FET drain-source capacitances; MIMIC mixers; MMIC mixers; conversion gain; distributed FET mixer signal/noise improvement; input/output element loading; mm-wave traveling wave distributed HEMT gate mixers; noise figures; power combining techniques; traveling wave transistors; Airports; Capacitance; Circuit simulation; Educational institutions; Electrodes; FETs; Integrated circuit measurements; Noise figure; Power measurement; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2002. EDMO 2002. The 10th IEEE International Symposium on

Print_ISBN

0-7803-7530-0

Type

conf

DOI

10.1109/EDMO.2002.1174972

Filename

1174972