DocumentCode
311723
Title
Resistance degradation of CVD (Ba,Sr)TiO3 thin films for DRAMs and integrated decoupling capacitors
Author
Basceri, C. ; Wells, M.A. ; Streiffer, S.K. ; Kingon, A.I. ; Bilodeau, S. ; Carl, R. ; Van Buskirk, P.C. ; Summerfelt, S.R. ; McIntyre, P.
Author_Institution
Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
Volume
1
fYear
1996
fDate
18-21 Aug 1996
Firstpage
51
Abstract
We have investigated the important failure mechanism of resistance degradation for polycrystalline MOCVD (Ba,Sr)TiO3 thin films appropriate for use in DRAMs, as a function of voltage (field), thickness and temperature. At constant field, the measured degradation lifetime decreases with increasing film thickness, resulting from a decrease in the activation energy with respect to temperature for thicker films. Similarly, there are clear indications that thicker films are more field sensitive. Predicted resistance degradation lifetimes obtained from both temperature and voltage extrapolations for DRAM operating conditions of 85°C and 1.6 V exceed the current benchmark of 10 years for all the films studied
Keywords
CVD coatings; DRAM chips; barium compounds; dielectric thin films; electrical resistivity; failure analysis; strontium compounds; thin film capacitors; (BaSr)TiO3; 1.6 V; 85 C; DRAM; activation energy; failure; integrated decoupling capacitor; polycrystalline MOCVD (Ba,Sr)TiO3 thin film; resistance degradation lifetime; Degradation; Electrical resistance measurement; Energy measurement; Extrapolation; Failure analysis; MOCVD; Temperature sensors; Thickness measurement; Transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location
East Brunswick, NJ
Print_ISBN
0-7803-3355-1
Type
conf
DOI
10.1109/ISAF.1996.602709
Filename
602709
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