Processing and properties of in-situ pulsed laser deposited PMN-PT thin films

Author

Tantigate, C. ; Safari, A.

Author_Institution

Dept. of Ceramic Sci. & Eng., Rutgers Univ., Piscataway, NJ, USA

Volume

1

fYear

1996

fDate

18-21 Aug 1996

Firstpage

479

Abstract

Thin films of PMN and PMN-PT were prepared by pulsed laser deposition (PLD) on MgO(100) and Pt coated Si substrates. Processing parameters such as substrate temperature, oxygen pressure, and substrate material have a significant effect on perovskite phase formation. Pure perovskite PMN and PMN-PT were obtained at substrate temperatures in the range of 535° to 565°C and an oxygen pressure of 200 mTorr. Perovskite PMN phase prefers to nucleate on the MgO(100) which has a smoother surface than that of the Pt coated Si substrate. An LSCO layer on Pt coated Si substrates promoted perovskite phase formation. The electrical properties of PMN and PMN-PT thin films were evaluated. A maximum dielectric constant of 4500 and dielectric loss of 0.05 at 1 kHz were obtained. The charge storage density of the films was about 100 fC/μm² at 50 kV/cm

Keywords

dielectric losses; ferroelectric thin films; lead compounds; permittivity; pulsed laser deposition; 200 mtorr; 535 to 565 degC; MgO; MgO(100) substrates; PMN-PbTiO₃; PbMgO3NbO3-PbTiO3; Pt coated Si substrates; Pt-Si; charge storage density; dielectric constant; dielectric loss; oxygen pressure; perovskite phase formation; pulsed laser deposition; substrate temperature; thin films; Dielectric constant; Dielectric losses; Dielectric substrates; Dielectric thin films; Optical materials; Optical pulses; Pulsed laser deposition; Semiconductor thin films; Sputtering; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on

Conference_Location

East Brunswick, NJ

Print_ISBN

0-7803-3355-1

Type

conf

DOI

10.1109/ISAF.1996.602793

Filename

602793