DocumentCode
3118480
Title
Solid state on-off switches using IGCT technology
Author
Welleman, A. ; Fleischmann, W. ; Kaesler, W.
Author_Institution
ABB Switzerland Ltd, Semiconductors, CH-5600 Lenzburg / Switzerland
Volume
2
fYear
2007
fDate
17-22 June 2007
Firstpage
1025
Lastpage
1028
Abstract
This presentation is about semiconductor devices used for On-Off pulse switching applications and used in a 12 kVdc / 3.2kA / 10 Hz solid state switch assembly. The switch assembly is built-up with IGCT (Integrated Gate Controlled Thyristors) and used for long pulse (1.7 ms) Klystron modulators. The design was made in 2002 and successfully implemented in the Tesla Test Facility (TTF) at DESY in Hamburg / Germany. The components and switches are in the position to switch and interrupt safely up to 4 kA. The presentation will inform about the IGCT devices, switch development, construction, production and commissioning of the complete assembly. Also reliability figures will be presented, and the last 4 years of operation have shown that the switches are extremely rugged. Several IGCT switches are in use in pulse modulators built by PPT Puls Plasmatechnik GmbH and this technology has resulted in a breakthrough for solid state switches in modulator applications. By using different silicon diameters for the devices, different current and pulse repetition rates can be achieved. A new improved version of the switch design is under development.
Keywords
Assembly; Klystrons; Plasma applications; Production; Pulse modulation; Semiconductor devices; Solid state circuits; Switches; Test facilities; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Conference, 2007 16th IEEE International
Conference_Location
Albuquerque, NM
Print_ISBN
978-1-4244-0913-6
Electronic_ISBN
978-1-4244-0914-3
Type
conf
DOI
10.1109/PPPS.2007.4652364
Filename
4652364
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