Optical characterization of InGaAsP/InAlAsP multiple quantum wells grown by MBE for 1 μm wavelength region

Author

Yamamoto, T. ; Kayama, M. ; Kawamura, Y.

Author_Institution

Frontier Sci. Innovation Center, Osaka Prefecture Univ., Sakai, Japan

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

InGaAsP/InAlAsP multiple quantum wells (MQWs) for 1 μm wavelength region optical modulators were proposed and were grown by molecular beam epitaxy (MBE). Optical properties, such as photoluminescence and optical absorption of InAlAsP layers, InGaAs/InAlAsP MQW layers and InGaAsP/InAlAsP MQW layers were studied in detail. A clear absorption edge was observed at about 1.06 μm for InGaAsP/InAlAsP MQW layers.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; light absorption; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; 1 μm wavelength region optical modulators; InGaAsP-InAlAsP; MBE; molecular beam epitaxy; multiple quantum wells; optical absorption; optical properties; photoluminescence; Electromagnetic wave absorption; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical modulation; Photoluminescence; Quantum well devices; Stimulated emission; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516349

Filename

5516349