Radiation degradation modeling of high efficiency GaAs/Ge solar cells

The performance modeling and predictions of the radiation degradation of solar cells is extremely important in designing a power system that will satisfy spacecraft requirements for an entire mission duration. High efficiency GaAs/Ge solar cells are more efficient and more resistant to space particle radiation than conventional Si solar cells, but a complete physical performance degradation model has not been developed that accurately predicts the GaAs/Ge solar cell radiation degradation characteristics. The conventional minority carrier diffusion length degradation model used to predict the performance of silicon solar cells does not accurately predict the observed GaAs/Ge solar cell performance degradation. A detailed radiation degradation modeling analysis examines why the conventional model does not accurately predict the performance degradation of GaAs/Ge solar cells and offers suggestions for a more accurate radiation degradation model