Physical and electrical characteristics for Si-doped GeSb9 phase-change memory

Author

Perng, Yu Hsun ; Lin, Shu Yu ; Lai, Wen Yen ; Chou, Lih Hsin

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2011

fDate

7-9 Nov. 2011

Firstpage

1

Lastpage

4

Abstract

A phase-change random access memory device, consisting of GeSb₉ based chalcogenide, TiW electrode and SiO₂ dielectric layer, was fabricated in order to investigate the electrical characteristic and failure mechanism. Amorphous Si-doped GeSb₉ with high crystallization temperature (235°C) exhibits extremely good thermal stability. Ten year data retention of 164°C shows the remarkable device reliability. After the continuous voltage sweeping of 1.6 V, an unexpected failure was observed via transmission electron microscopy (TEM) image. The failure mechanism was clarified and Si-doped GeSb₉ based PRAM material is concluded to be potential in virtue of its improved device reliability and thermal stability.

Keywords

elemental semiconductors; failure analysis; germanium compounds; integrated circuit reliability; phase change memories; random-access storage; silicon; thermal stability; GeSb₉:Si; PRAM material; chalcogenide; continuous voltage sweeping; device reliability; dielectric layer; electrical characteristics; failure mechanism; phase-change random access memory device; temperature 164 degC; temperature 235 degC; thermal stability; voltage 1.6 V; Electrodes; Failure analysis; Phase change random access memory; Resistance; Silicon; Temperature measurement; Thermal stability; Ge-Sb alloy; crystallization; electrical properties; failure analysis; phase change random access memory; silicon doping; thermal propertied;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual

Conference_Location

Shanghai

Print_ISBN

978-1-4577-1428-3

Type

conf

DOI

10.1109/NVMTS.2011.6137081

Filename

6137081