Composition control of GexSbyTez film for PCRAM application by chemical vapor deposition

Author

Horiike, Takafumi ; Hamada, Seiti ; Uno, Tomohiro ; Machida, Hideaki ; Ishikawa, Masato ; Sudo, Hiroshi ; Ohshita, Yoshio ; Ogura, Atsushi

Author_Institution

Sch. of Sci. & Technol., Meiji Univ., Kawasaki, Japan

fYear

2011

fDate

7-9 Nov. 2011

Firstpage

1

Lastpage

4

Abstract

This paper describes chemical vapor deposition (CVD) of GeSbTe (GST) film for fabricating phase change memory, especially for the back end of line memory application. We successfully controlled the film composition including stoichiometric Ge₂Sb₂Te₅ by changing deposition conditions. The deposited films had a significantly smooth surface and it was possible to fill a high aspect hole. The mechanism to control the film composition in a high aspect hole is discussed in detail based on the precursor interferences experiment in the cavity.

Keywords

antimony alloys; chalcogenide glasses; chemical vapour deposition; germanium alloys; phase change memories; tellurium alloys; Ge_xSb_yTe_z; PCRAM application; back end of line memory application; chemical vapor deposition; composition control; deposition conditions; film composition; high aspect hole; phase change memory; Atmosphere; Cavity resonators; Films; Interference; Phase change random access memory; Scanning electron microscopy; Substrates; CVD; GeSbTe; PCRAM;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual

Conference_Location

Shanghai

Print_ISBN

978-1-4577-1428-3

Type

conf

DOI

10.1109/NVMTS.2011.6137082

Filename

6137082