DocumentCode
3121612
Title
Pressure contacted IGBTs
Author
Evans, M.J.
Author_Institution
Westcode Semicond. Ltd., Chippenham, UK
fYear
1999
fDate
1999
Firstpage
42552
Lastpage
42556
Abstract
Some of the design considerations for the implementation of a bondless, pressure contacted IGBT are outlined. Whilst the electrical performance of each type of device is similar, some differences in the mechanical and thermal properties of pressure contacted devices to those exhibited by substrate mounted devices are highlighted. These differences are such that bondless pressure contact IGBT devices may offer exploitable advantages in some applications
Keywords
power bipolar transistors; applications; bondless pressure-contacted IGBTs; design considerations; device advantages; electrical performance; mechanical properties; thermal properties;
fLanguage
English
Publisher
iet
Conference_Titel
Recent Advances in Power Devices (Ref. No. 1999/104), IEE Colloquium on
Conference_Location
London
Type
conf
DOI
10.1049/ic:19990597
Filename
789941
Link To Document