Cell-based models for the switching statistics of RRAM

Author

Long, Shibing ; Cagli, Carlo ; Ielmini, Daniele ; Liu, Ming ; Suñé, Jordi

Author_Institution

Dept. d´´Eng. Electron., Univ. Autonoma de Barcelona, Barcelona, Spain

fYear

2011

fDate

7-9 Nov. 2011

Firstpage

1

Lastpage

5

Abstract

Departing from the percolation model of dielectric breakdown, we establish a framework of analysis and modeling of the resistive switching statistics in RRAM. A deterministic model for the RESET dynamics based on the thermal dissolution of the conductive filament (CF) is incorporated into simple geometrical cell-based models to construct a complete physics-based analytical model for the RESET statistics. This model nicely accounts for the experimental V_RESET and I_RESET distributions in relation to the size of the CF in Pt/NiO/W devices.

Keywords

electric breakdown; nickel compounds; platinum; random-access storage; tungsten; IRESET distributions; Pt-NiO-W; RESET dynamics; RRAM; VRESET distributions; cell-based models; conductive filament; dielectric breakdown; percolation model; resistive random access memory; resistive switching statistics; thermal dissolution; Analytical models; Approximation methods; Electric breakdown; Physics; Reliability; Resistance; Switches; conductive filament cell-based analytical model; resistive random access memory (RRAM); resistive switching statistics;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual

Conference_Location

Shanghai

Print_ISBN

978-1-4577-1428-3

Type

conf

DOI

10.1109/NVMTS.2011.6137096

Filename

6137096