DocumentCode
3121993
Title
Overview of FeRAMs: Trends and perspectives
Author
Takashima, Daisaburo
Author_Institution
Center for Semicond. R&D, Toshiba Corp., Yokohama, Japan
fYear
2011
fDate
7-9 Nov. 2011
Firstpage
1
Lastpage
6
Abstract
In this paper, the overview of FeRAMs, the key techniques and technical trends for scaled FeRAMs, and the marketing strategy are presented. Advantages of FeRAM compared with other emerging memories, overview of 1T1C-FeRAM and chain FeRAM, trend of memory cells and FeRAM chip features, various key device and circuit techniques to achieve low voltage scaled FeRAMs such as capacitor damage suppression and cell signal enhancement are demonstrated. High-speed embedded FeRAM solution, future cell direction, and marketing strategy to take full advantage of FeRAM merits are also discussed.
Keywords
ferroelectric storage; random-access storage; 1T1C-FeRAM; capacitor damage suppression; cell signal enhancement; chain FeRAM; ferroelectric random access memory; high-speed embedded FeRAM solution; marketing strategy; memory cells; Arrays; Capacitors; Ferroelectric films; Nonvolatile memory; Random access memory; Very large scale integration; FeRAM; chain FeRAM; ferroelectric memory; memory cell; scaling;
fLanguage
English
Publisher
ieee
Conference_Titel
Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual
Conference_Location
Shanghai
Print_ISBN
978-1-4577-1428-3
Type
conf
DOI
10.1109/NVMTS.2011.6137107
Filename
6137107
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