• DocumentCode
    3121993
  • Title

    Overview of FeRAMs: Trends and perspectives

  • Author

    Takashima, Daisaburo

  • Author_Institution
    Center for Semicond. R&D, Toshiba Corp., Yokohama, Japan
  • fYear
    2011
  • fDate
    7-9 Nov. 2011
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    In this paper, the overview of FeRAMs, the key techniques and technical trends for scaled FeRAMs, and the marketing strategy are presented. Advantages of FeRAM compared with other emerging memories, overview of 1T1C-FeRAM and chain FeRAM, trend of memory cells and FeRAM chip features, various key device and circuit techniques to achieve low voltage scaled FeRAMs such as capacitor damage suppression and cell signal enhancement are demonstrated. High-speed embedded FeRAM solution, future cell direction, and marketing strategy to take full advantage of FeRAM merits are also discussed.
  • Keywords
    ferroelectric storage; random-access storage; 1T1C-FeRAM; capacitor damage suppression; cell signal enhancement; chain FeRAM; ferroelectric random access memory; high-speed embedded FeRAM solution; marketing strategy; memory cells; Arrays; Capacitors; Ferroelectric films; Nonvolatile memory; Random access memory; Very large scale integration; FeRAM; chain FeRAM; ferroelectric memory; memory cell; scaling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4577-1428-3
  • Type

    conf

  • DOI
    10.1109/NVMTS.2011.6137107
  • Filename
    6137107