Properties and applications of Sn-doped single crystal thin film magneto-resistance elements

Author

Nishimura, K. ; Goto, H. ; Yamada, S. ; Geka, H. ; Okamoto, A. ; Shibasaki, I.

Author_Institution

Asahikasei Corp., Fujian, China

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

1102

Abstract

Using Sn-doped single crystal InSb thin films of 1.0-μm thickness grown on GaAs substrates by molecular beam epitaxy, new magneto-resistance elements with very small temperature dependence were developed. Using these magneto-resistance elements, the contactless detection of the rotation speed of rotating gear teeth over a wide range of rotation speeds was studied. The output voltage from the magneto-resistance element was independent of the rotation speed of the gear, and exhibited good temperature stability and very small sine wave sine wave distortion, which allowed fine detection of the angular velocity of the rotations.

Keywords

angular velocity measurement; gallium arsenide; indium compounds; magnetic sensors; magnetoresistive devices; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; substrates; tin; 1.0 micron; GaAs; InSb:Sn; angular velocity; gallium arsenide substrates; molecular beam epitaxy; rotating gear teeth; rotation speed detection; single crystal thin film magneto-resistance elements; temperature dependence; tin-doped single crystal indium antimonide thin films; Gallium arsenide; Gears; Magnetic properties; Molecular beam epitaxial growth; Stability; Substrates; Teeth; Temperature dependence; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2004. Proceedings of IEEE

Print_ISBN

0-7803-8692-2

Type

conf

DOI

10.1109/ICSENS.2004.1426368

Filename

1426368