DocumentCode
3124084
Title
Plasma damage considerations involving metal-insulator-metal (MIM) capacitors
Author
Connell, Barry O. ; Thibeault, Todd ; Chaparala, Prasad
Author_Institution
Nat. Semicond. Corp., Santa Clara, CA, USA
fYear
2004
fDate
2004
Firstpage
123
Lastpage
126
Abstract
Impact on MIM capacitor reliability with respect to plasma damage is investigated for different dielectric films and layout variations. MIM capacitor reliability is found to be sensitive to dielectric type, MIM layout and bottom plate metal processing. Plasma Process steps responsible for affecting MIM reliability are identified.
Keywords
MIM devices; leakage currents; passivation; plasma materials processing; semiconductor device breakdown; semiconductor device reliability; sputter etching; thin film capacitors; MIM capacitor reliability; MM layout; bottom plate metal processing; breakdown voltage; cap leakage; damage susceptibility; dielectric type; increased leakage; layout variations; plasma damage; process flow; reliable process module; Capacitance; Circuits; Dielectric films; Frequency; Linearity; MIM capacitors; Metal-insulator structures; Plasma materials processing; Q factor; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on
Print_ISBN
0-7803-8528-4
Type
conf
DOI
10.1109/ICICDT.2004.1309925
Filename
1309925
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