Trends in gate stack engineering

Author

Nouri, F. ; Kher, Sanjay ; Narwankar, P. ; Sharangpani, Rahul ; Muthukrishnan, Shankar ; Kraus, Philip ; Ahmed, Khaled ; Olsen, Chris ; Chua, Mai Cheng ; Cruse, Jim ; Hung, Steven ; Bae, Sang Ho ; Kang, Andrew ; Higashi, Gregg ; Miner, Gary

Author_Institution

Appl. Mater. Inc., Santa Clara, CA, USA

fYear

2004

fDate

2004

Firstpage

275

Lastpage

281

Abstract

MOSFET scaling requires an increase in the dielectric capacitance and hence a decrease in the dielectric electrical thickness. In this paper, we review the scaling trends for the gate dielectric and the gate electrode as the industry faces the challenges of introducing new materials into production.

Keywords

MOSFET; dielectric thin films; leakage currents; nitridation; plasma materials processing; thermal stability; MOSFET scaling; clustered gate processing; dielectric capacitance increase; dielectric electrical thickness decrease; gate electrode; gate stack engineering; leakage current density; oxynitrides; plasma nitridation; plasma potential; Boron; Dielectric materials; Electrodes; High-K gate dielectrics; Inorganic materials; MOSFET circuits; Nitrogen; Plasma chemistry; Plasma measurements; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on

Print_ISBN

0-7803-8528-4

Type

conf

DOI

10.1109/ICICDT.2004.1309961

Filename

1309961

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3124794