Electromigration performance of CVD-W/Al-alloy multilayered metallization

Author

Martin, C.A. ; Ondrusek, J.C. ; McPherson, J.W.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1990

fDate

27-29 March 1990

Firstpage

31

Lastpage

36

Abstract

Al alloys, including Al-Si(1%) and Al-Cu(2%), are investigated. The electromigration test results indicate that the rough surface texture of the underlying chemical vapor deposition (CVD)-W layer degrades the electromigration performance of the Al-Si film. The rough CVD-W surface texture had minimal impact on the electromigration performance of the Al-Cu films. A current-density exponent of 2.1-2.2 was found for both types of films. An activation energy for failure was determined to be 0.75 eV and 0.46 eV for the Al-Cu and Al-Si, respectively.<>

Keywords

CVD coatings; VLSI; aluminium alloys; copper alloys; electromigration; failure analysis; integrated circuit technology; metallic thin films; metallisation; silicon alloys; surface texture; tungsten; VLSI; W surface texture; W-AlCu; W-AlSi; activation energy; current-density exponent; electromigration test results; multilayered metallization; rough surface texture; time to failure; underlying chemical vapor deposition; Chemical vapor deposition; Degradation; Electromigration; Metallization; Rough surfaces; Silicon; Surface roughness; Surface texture; Testing; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1990. 28th Annual Proceedings., International

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/RELPHY.1990.66057

Filename

66057