Examination of hole mobility in ultra-thin body SOI MOSFETs

Author

Ren, Zhibin ; Solomon, Paul M. ; Kanarsky, Thomas ; Doris, Bruce ; Dokumaci, Omer ; Oldiges, Phil ; Roy, Ronnen A. ; Jones, Erin C. ; Ieong, Meikei ; Miller, Robert J. ; Haensch, Wilfried ; Wong, H. S Philip

Author_Institution

IBM Semicond. Res. & Dev. Center, T. J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

51

Lastpage

54

Abstract

This paper presents an experimental examination of hole mobility in ultra-thin body (UTB) SOI MOSFETs, covering wide ranges of T/sub SOI/ (between /spl sim/3.7 nm and /spl sim/50 nm), and temperature (between /spl sim/79 K and /spl sim/320 K). This paper addresses the observed strong degradation of hole mobility at extremely thin T/sub SOI/, proposing an additional surface roughness scattering mechanism for the thinnest samples due to the perturbation of the conducting band potential stemming from spatial confinement.

Keywords

MOSFET; hole mobility; silicon-on-insulator; surface scattering; 3.7 to 50 nm; 79 to 320 K; conducting band potential; hole mobility; spatial confinement; surface roughness scattering; ultra-thin body SOI MOSFET; CMOS technology; Degradation; Electrical resistance measurement; Immune system; MOSFETs; Microelectronics; Research and development; Rough surfaces; Semiconductor films; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175777

Filename

1175777