Degradation mechanisms of GaN-based LEDs after accelerated DC current aging

Author

Meneghesso, G. ; Levada, S. ; Pierobon, R. ; Rampazzo, F. ; Zanoni, E. ; Cavallini, A. ; Castaldini, A. ; Scamarcio, G. ; Du, S. ; Eliashevich, I.

Author_Institution

Dipt. di Elettronica e Inf., Padova Univ., Italy

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

103

Lastpage

106

Abstract

This work presents the results of an extensive DC current aging and failure analysis carried out on blue InGaN/GaN LEDs which identify failure mechanisms related to package degradation, changes in effective doping profile, and generation of deep levels. DLTS and photocurrent spectra indicate the creation of extended defects in devices aged at very high current density.

Keywords

III-V semiconductors; ageing; deep level transient spectroscopy; doping profiles; extended defects; failure analysis; gallium compounds; indium compounds; light emitting diodes; photoconductivity; wide band gap semiconductors; DLTS; InGaN-GaN; accelerated DC current aging; blue InGaN/GaN LED; current density; deep levels; doping profile; extended defects; failure analysis; package degradation; photocurrent spectra; Accelerated aging; Current density; DC generators; Degradation; Doping profiles; Failure analysis; Gallium nitride; Light emitting diodes; Packaging; Photoconductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175789

Filename

1175789