DocumentCode
3128161
Title
Observation of hot-carrier-induced nFET gate-oxide breakdown in dynamically stressed CMOS circuits
Author
Kaczer, B. ; Crupi, F. ; Degraeve, R. ; Roussel, Ph. ; Ciofi, C. ; Groeseneken, G.
Author_Institution
IMEC, Leuven, Belgium
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
171
Lastpage
174
Abstract
Subjecting a ring oscillator circuit with short-channel thin-oxide FETs to dynamic stress results in the majority of nFET and pFET drain-side gate-oxide breakdowns. The enhancement in the drain-side breakdowns, which are potentially the most detrimental to circuit operation, is shown to be induced in nFETs by channel hot carriers.
Keywords
CMOS digital integrated circuits; MOSFET; hot carriers; integrated circuit measurement; integrated circuit reliability; semiconductor device breakdown; channel hot carriers; circuit operation; drain-side gate-oxide breakdowns; dynamically stressed CMOS circuits; hot-carrier-induced nFET gate-oxide breakdown; ring oscillator circuit; short-channel thin-oxide FETs; Circuit simulation; Digital circuits; Electric breakdown; FETs; Frequency measurement; Hot carriers; Ring oscillators; Solids; Stress measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175806
Filename
1175806
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