• DocumentCode
    3128328
  • Title

    Integrated surface-micromachined z-axis frame microgyroscope

  • Author

    Palaniapan, Moorthi ; Howe, Roger T. ; Yasaitis, John

  • Author_Institution
    Berkeley Sensor & Actuator Center, California Univ., Berkeley, CA, USA
  • fYear
    2002
  • fDate
    8-11 Dec. 2002
  • Firstpage
    203
  • Lastpage
    206
  • Abstract
    We report the first integrated surface-micro machined z-axis frame microgyroscope fabricated in the Analog Devices Modular-MEMS process using 6 /spl mu/m thick polysilicon as the structural material and 5 V 0.8 /spl mu/m CMOS process. This vibratory microgyroscope, which operates in vacuum, measures the z-axis rotation rate by sensing the induced Coriolis acceleration using capacitive sensing. The amplitude of drive motion was estimated to be 2 /spl mu/m. The frame gyroscope mechanically decouples the drive and sense motion for stable operation. Integration of circuits and mechanical structures on the same substrate allowed signal sensing with low parasitics. The surface micromachined integrated z-axis frame gyroscope fabricated at Analog Devices has a measured noise floor of 0.05 deg/s//spl radic/Hz and a scale factor of 0.33 mV/deg/sec at 70 mtorr ambient pressure.
  • Keywords
    CMOS integrated circuits; acceleration measurement; capacitive sensors; gyroscopes; micromachining; microsensors; silicon; stability; 0.8 micron; 2 micron; 5 V; 6 micron; 70 mtorr; Analog Devices Modular-MEMS process; CMOS process; Si; capacitive sensing; device fabrication; induced Coriolis acceleration sensing; integrated surface-micromachined gyroscope; low parasitics; polysilicon structural material; stable operation; vibratory microgyroscope; z-axis frame microgyroscope; z-axis rotation rate; Acceleration; Accelerometers; Amplitude estimation; CMOS process; Gyroscopes; Integrated circuit measurements; Motion estimation; Noise measurement; Rotation measurement; Vibration measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2002. IEDM '02. International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-7462-2
  • Type

    conf

  • DOI
    10.1109/IEDM.2002.1175813
  • Filename
    1175813