A novel 0.79 /spl mu/m/sup 2/ SRAM cell by KrF lithography and high performance 90 nm CMOS technology for ultra high speed SRAM

Author

Soon-Moon Jung ; Hyungshin Kwon ; Jaehun Jeong ; Wonseok Cho ; Sungbong Kim ; Hoon Lim ; Kwangok Koh ; Youngseop Rah ; Jaekyun Park ; Heesoo Kang ; Gyuho Lyu ; Joonbum Park ; Chulsoon Chang ; Youngchul Jang ; Donggun Park ; Kinam Kim ; Moon Yong Lee

Author_Institution

Adv. Technol. Dev. Team, Samsung Electron. Co. Ltd., South Korea

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

419

Lastpage

422

Abstract

The smallest SRAM cell, 0.79 /spl mu/m/sup 2/, was realized by a revolutionary cell layout, fine tuned OPC technique to overcome the 248 nm KrF lithography limitation, instead of using 193 nm ArF lithography. Sub-100 nm CMOS technology was indispensable to achieve the cell size as well as the performance. The high performance transistors were made with 80 nm gate length including 15 /spl Aring/ nitrided gate oxide layer, indium channel and halo implantation processes. The novel cell exhibits excellent neutron SER immunity, compared with ones of the SRAM cell by previous generation technologies.

Keywords

CMOS memory circuits; SRAM chips; high-speed integrated circuits; integrated circuit layout; ion implantation; neutron effects; proximity effect (lithography); ultraviolet lithography; 15 A; 248 nm; 80 nm; 80 nm gate length; 90 nm; CMOS SRAM cell; In channel; KrF lithography; cell layout; cell size; fine tuned OPC technique; halo implantation processes; high performance 90 nm CMOS technology; high performance transistors; neutron SER immunity; nitrided gate oxide layer; ultra high speed SRAM; CMOS technology; Flash memory; Indium; Lithography; Moon; Neutrons; Random access memory; Research and development; Resists; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175868

Filename

1175868