DocumentCode
3129509
Title
Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
Author
Gao, Q. ; Joyce, H.J. ; Paiman, S. ; Tan, H.H. ; Kim, Y. ; Smith, L.M. ; Jackson, H.E. ; Yarrison-Rice, J.M. ; Zhang, X. ; Zou, J. ; Jagadish, C.
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear
2009
fDate
13-17 July 2009
Firstpage
1
Lastpage
2
Abstract
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group.
Keywords
III-V semiconductors; MOCVD; epitaxial growth; gallium arsenide; indium compounds; nanowires; optoelectronic devices; substrates; GaAs; III-V semiconductor nanowires; InP; MOCVD; VLS mechanism; epitaxial growth; optoelectronic devices; substrates; Epitaxial growth; Gallium arsenide; Gold; III-V semiconductor materials; Indium phosphide; MOCVD; Nanowires; Optoelectronic devices; Physics; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-4102-0
Electronic_ISBN
978-1-4244-4103-7
Type
conf
DOI
10.1109/OECC.2009.5219756
Filename
5219756
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