An in-depth study on the fabrication of 1055–1064 nm multi-quantum-well and super-lattice laser diodes

In this paper the InGaAs/GaAs multi-quantum-well as well as the AlGaAs/GaAs and the GaAsP/GaAs super-lattice material systems have been employed to develop 1055-1064 nm quantum-well laser diodes, including epitaxial growth and device fabrication technologies. The semiconductor-type seed laser can be used in the pulsed optical-fiber system. Extensive research efforts have been made to generate blue and green light directly from semiconductor laser diodes because of their various advantages such as low noise, high-frequency modulation capability, wavelength tunability, compactness, and easy integration. Because the low-cost GaAs substrate was adopted, it is expected that the manufacturing expense of the optical communication network will be reduced as well as the lasing performance will be excellent, and it is very helpful for the future global optical-fiber platform implementation.