Monolithically Integrated Four-channel DFB Laser Array by MOVPE Selective Area Growth for 1.5 μ m CWDM Systems

Author

Darja, Jesse ; Chan, Melvin J. ; Sugiyama, Masakazu ; Nakano, Yoshiaki

Author_Institution

Electron. Eng., Tokyo Univ., Bunkyo

fYear

2006

fDate

Oct. 29 2006-Nov. 2 2006

Firstpage

655

Lastpage

656

Abstract

Integrated InGaAsP DFB laser array for 1.5 μm coarse wavelength division multiplexing has been fabricated by MOVPE selective area growth. An integrated MMI coupler is used to multiplex the laser outputs to a single output waveguide

Keywords

III-V semiconductors; MOCVD; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical communication equipment; optical fabrication; optical fibre couplers; semiconductor laser arrays; vapour phase epitaxial growth; wavelength division multiplexing; 1.5 micron; CWDM system; InGaAsP; MOVPE selective area growth; coarse wavelength division multiplexing; integrated MMI coupler; laser array fabrication; laser output multiplexing; monolithically integrated four-channel DFB laser array; single output waveguide; Epitaxial growth; Epitaxial layers; Fiber lasers; Laser modes; Optical arrays; Optical coupling; Optical waveguides; Photonic band gap; Waveguide lasers; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE

Conference_Location

Montreal, Que.

Print_ISBN

0-7803-9556-5

Electronic_ISBN

0-7803-9555-7

Type

conf

DOI

10.1109/LEOS.2006.278866

Filename

4054354