Modeling of ultrahighly doped shallow junctions for aggressively scaled CMOS

Author

Kennel, H.W. ; Cea, S.M. ; Lilak, A.D. ; Keys, P.H. ; Giles, M.D. ; Hwang, J. ; Sandford, J.S. ; Corcoran, S.

Author_Institution

TCAD Div., Intel Corp., Hillsboro, OR, USA

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

875

Lastpage

878

Abstract

This paper presents an integrated modeling approach to address diffusion and activation challenges in sub-90 nm CMOS technology. Co-implants of F and Ge are shown to reduce diffusion rates and a new model for the interactive effects is presented. Complex codiffusion behavior of As and P is presented and modeling concepts elucidated. Tradeoffs such as sheet resistance for a given junction depth, and how these depend on impurities, as well as soak vs. spike rapid thermal anneals (RTA), can be understood with simulation models.

Keywords

CMOS integrated circuits; diffusion; rapid thermal annealing; semiconductor doping; semiconductor process modelling; 90 nm; Si:As,P; Si:F,Ge; aggressively scaled CMOS; codiffusion behavior; diffusion rates; integrated modeling approach; interactive effects; junction depth; rapid thermal anneals; sheet resistance; simulation models; ultrahighly doped shallow junctions; Bismuth; Boron; CMOS technology; Implants; Impurities; Rapid thermal annealing; Semiconductor device modeling; Semiconductor process modeling; Simulated annealing; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175976

Filename

1175976