DocumentCode
3131844
Title
A CMOS magnetic latch with extremely high resolution
Author
Li, Z.Q. ; Sun, X.W.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
909
Lastpage
912
Abstract
A novel CMOS magnetic latch with extremely high magnetic resolution based on a single split-drain magnetic field-effect transistor is reported. The minimum detectable magnetic flux density is less than 4 /spl mu/T. The resolution for magnetic pattern recognition is less than 2 mT. The breakthrough has been achieved by importing a positive feedback.
Keywords
MOSFET; magnetic field measurement; magnetic sensors; pattern recognition; CMOS magnetic latch; magnetic field sensor; magnetic flux detection; magnetic pattern recognition; magnetic resolution; positive feedback; split-drain magnetic field-effect transistor; FETs; Latches; Magnetic devices; Magnetic fields; Magnetic flux; Magnetic flux density; Magnetic sensors; Saturation magnetization; Sensor arrays; Spatial resolution;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175984
Filename
1175984
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