DocumentCode
3132076
Title
Afterpulsing Effects in 1.5 μm Single Photon Avalanche Photodetectors
Author
Ben-Michael, Rafael ; Itzler, Mark A. ; Nyman, Bruce
Author_Institution
Dept. of Electr. Eng., Princeton Lightwave Inc., Cranbury, NJ
fYear
2006
fDate
Oct. 29 2006-Nov. 2 2006
Firstpage
783
Lastpage
784
Abstract
The effects of short (~1 ns) gating pulses and blanking on afterpulsing in an InGaAs/InP single photon detector are characterized at 1.5μm. Afterpulse mitigation using gate pulse blanking immediately following detection events is studied, and temporal effects are discussed
Keywords
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; photodetectors; photon counting; 1.5 micron; InGaAs-InP; InGaAs-InP photon detector; afterpulse mitigation; gate pulse blanking; single photon avalanche photodetector; Avalanche photodiodes; Blanking; Breakdown voltage; Indium phosphide; Optical pulse generation; Photodetectors; Semiconductor lasers; Space vector pulse width modulation; Steady-state; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location
Montreal, Que.
Print_ISBN
0-7803-9556-5
Electronic_ISBN
0-7803-9555-7
Type
conf
DOI
10.1109/LEOS.2006.279001
Filename
4054418
Link To Document