A Comparison of the Lower Limit of Multiplication Noise in InP and InAlAs Based APDs for Telecommunications Receiver Applications

Author

Marshall, A.R.J. ; Goh, Y.L. ; Tan, L.J.J. ; Tan, C.H. ; Ng, J.S. ; David, J.P.R.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Sheffield

fYear

2006

fDate

Oct. 2006

Firstpage

789

Lastpage

790

Abstract

In this work newly derived non-local ionization coefficients covering the required high field range have been used, together with a random path length model, to accurately evaluate multiplication and excess noise in both InP and InAlAs multiplication regions. The multiplication of both the intentionally injected photocurrent and the tunneling current has been modeled. A range of APD multiplication widths have been evaluated and APD performance has been combined with a modeled receiver front end, to interpret the results in terms of receiver sensitivity

Keywords

III-V semiconductors; aluminium compounds; avalanche breakdown; avalanche photodiodes; indium compounds; optical receivers; photoconductivity; photoemission; APD; InAlAs; InP; multiplication noise; nonlocal ionization coefficient; photocurrent; receiver sensitivity; telecommunication receiver; tunneling current; Absorption; Bit error rate; III-V semiconductor materials; Impact ionization; Indium compounds; Indium phosphide; Noise figure; Noise reduction; Signal to noise ratio; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE

Conference_Location

Montreal, Que.

Print_ISBN

0-7803-9555-7

Electronic_ISBN

0-7803-9555-7

Type

conf

DOI

10.1109/LEOS.2006.279004

Filename

4054421