60 GHz monolithic LNA utilizing high-speed InAlAs/InGaAs/InP HEMTs and coplanar waveguides

Author

Berg, M. ; Dickmann, Juergen ; Bischof, W. ; Kosslowskii, S. ; Narozny, P.

Author_Institution

Res. Center, Daimler-Benz AG, Ulm, Germany

fYear

1995

fDate

9-13 May 1995

Firstpage

77

Lastpage

80

Abstract

A monolithic two-stage low noise amplifier (LNA) on InP substrate is presented. Coplanar waveguides and lumped elements are used for the matching and biasing networks. The circuit is fully passivated and contains common ports for the gate and the drain bias. The total chip size is 2 mm×1 mm. A gain of 15 dB and an input and output matching better than -8 dB were achieved at 60 GHz

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; coplanar waveguides; field effect MIMIC; gallium arsenide; impedance matching; indium compounds; integrated circuit noise; 15 dB; 60 GHz; InAlAs-InGaAs-InP; InP; InP substrate; V-band LNA chip; biasing networks; common ports; coplanar waveguides; fully passivated circuit; high-speed InAlAs/InGaAs/InP HEMTs; input/output matching; lumped elements; matching networks; monolithic two-stage low noise amplifier; small-signal power gain; total chip size; Circuit noise; Coplanar waveguides; Gain; HEMTs; Impedance matching; Indium compounds; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; MODFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522080

Filename

522080