Dopant Activation and Leakage Current Aspects of SDE/Halo CMOS Junctions Measured with Non-contact Junction Photo-Voltage Methods

Author

Current, Michael ; Faifer, Vladimir ; Halim, J. ; Ohno, Naotsugu

Author_Institution

Frontier Semicond., San Jose

fYear

2007

fDate

8-9 June 2007

Firstpage

43

Lastpage

46

Abstract

The thin depletion layers and high leakage currents for shallow SDE/halo profiles rule out the continued use of direct contact sheet resistance probes. Non-contact probes based on junction photo-voltage (JPV) measurements provide accurate sheet resistance, Rs, values as well as quantitative evaluation of process-related aspects of junction leakage current. These combined JPV methods are referred to as "RsL" probes.

Keywords

CMOS integrated circuits; doping profiles; leakage currents; semiconductor doping; semiconductor junctions; voltage measurement; SDE/halo CMOS junctions; Si; Si - Interface; dopant activation; junction leakage current; noncontact junction photovoltage methods; noncontact probes; shallow SDE/halo profiles; sheet resistance; source/drain extension junction; thin depletion layers; Annealing; Area measurement; Current measurement; Electrical resistance measurement; Electrodes; Frequency modulation; Leakage current; Optical modulation; P-n junctions; Probes;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2007 International Workshop on

Conference_Location

Kyoto

Print_ISBN

1-4244-1103-3

Electronic_ISBN

1-4244-1104-1

Type

conf

DOI

10.1109/IWJT.2007.4279942

Filename

4279942