DocumentCode
3133278
Title
Electronic and structural properties of thin SrF2 films on InP
Author
Heun, S. ; Sugiyama, M. ; Maeyama, Shoichi ; Watanabe, Y. ; Oshima, M.
Author_Institution
NTT Interdisciplinary Res. Labs., Tokyo, Japan
fYear
1995
fDate
9-13 May 1995
Firstpage
269
Lastpage
272
Abstract
In this paper we present the results of our experiments on the deposition of SrF2 on InP. Four different substrates were used for these investigations: HF-etched and as-treated InP(100) and (111)B. On these surfaces 35-50 Å SrF2 was deposited at room temperature. We also studied the changes in the films due to annealing. To clarify the morphology of the films: transmission electron microscopy (TEM) and atomic force microscopy (AFM) were employed
Keywords
III-V semiconductors; annealing; atomic force microscopy; indium compounds; insulating thin films; molecular beam epitaxial growth; semiconductor-insulator boundaries; strontium compounds; surface cleaning; surface structure; transmission electron microscopy; (111)B substrate; 20 C; 35 to 50 A; AFM; HF-etched InP(100); InP; MBE; SrF2-InP; TEM; annealing; as-treated InP(100); atomic force microscopy; electronic properties; morphology; room temperature; structural properties; substrates; thin SrF2 films; transmission electron microscopy; Crystallization; Indium phosphide; Lattices; Molecular beam epitaxial growth; Rough surfaces; Substrates; Surface roughness; Surface treatment; Temperature distribution; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location
Hokkaido
Print_ISBN
0-7803-2147-2
Type
conf
DOI
10.1109/ICIPRM.1995.522131
Filename
522131
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