DocumentCode
3133283
Title
Rapid Thermal Scanning for Dopant Activation for Advanced Junction Technology
Author
Yoo, Woo Sik ; Kang, Kitaek
Author_Institution
WaferMasters Inc., San Jose
fYear
2007
fDate
8-9 June 2007
Firstpage
119
Lastpage
120
Abstract
Rapid thermal scanning for activation of dopants is proposed for applications in advanced junction formation. The proposed rapid thermal scanning dopant activation technique was found to be very effective for both deep and shallow implanted junctions while providing enhanced activation parameter control capability.
Keywords
ion implantation; rapid thermal annealing; semiconductor doping; semiconductor junctions; activation parameter control capability; advanced junction technology; deep implanted junctions; dopant activation; rapid thermal scanning; shallow implanted junctions; Chemical lasers; Crystallization; Electrical resistance measurement; Epitaxial growth; Implants; Lamps; Rapid thermal annealing; Rapid thermal processing; Solid lasers; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology, 2007 International Workshop on
Conference_Location
Kyoto
Print_ISBN
1-4244-1103-3
Electronic_ISBN
1-4244-1104-1
Type
conf
DOI
10.1109/IWJT.2007.4279962
Filename
4279962
Link To Document