MOVPE-overgrowth for buried InP/(In,Ga)(As,P) laser diode arrays

Author

Knauer, A. ; Vogel, K. ; Zeimer, U. ; Pittroff, W. ; Weyers, M. ; Wolter, P.

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztechnik Berlin, Germany

fYear

1995

fDate

9-13 May 1995

Firstpage

287

Lastpage

290

Abstract

In this work we studied the growth kinetics of InP and (In,Ga)(As,P) during the regrowth process over rectangular mesas with ⟨011⟩ oriented sidewalls as a function of the growth temperature, of the mesa orientation and of the mesa size. We demonstrate that small changes in T_g may result in a suppression of growth on the {011} and {111}B planes. Results of overgrown laser structures for laser diode arrays demonstrate the good quality of the developed overgrowth process

Keywords

III-V semiconductors; buried layers; gallium arsenide; indium compounds; semiconductor growth; semiconductor laser arrays; vapour phase epitaxial growth; ⟨011⟩ oriented sidewalls; InP; InP-InGaAsP; MOVPE-overgrowth; buried InP/(In,Ga)(As,P) laser diode arrays; growth kinetics; growth temperature; mesa orientation; mesa size; overgrown laser structures; rectangular mesas; regrowth process; Diode lasers; Epitaxial growth; Epitaxial layers; Indium phosphide; Inductors; Optical arrays; Semiconductor laser arrays; Shape; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522136

Filename

522136