DocumentCode
3133396
Title
Preparation and optical characterization of nanoscale InP islands embedded in In0.48Ga0.52P
Author
Kurtenbach, A. ; Eberl, K. ; Jin-Phillipp, N.Y. ; Noll, F. ; Phillipp, F.
Author_Institution
Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany
fYear
1995
fDate
9-13 May 1995
Firstpage
295
Lastpage
298
Abstract
We report on the preparation of InP islands embedded in In0.48Ga0.52P by solid-source molecular beam epitaxy (MBE). We have investigated the onset of islanding by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). Overgrown InP islands are characterized by cross-sectional transmission electron microscopy (TEM) and photoluminescence (PL) measurements
Keywords
III-V semiconductors; atomic force microscopy; indium compounds; island structure; molecular beam epitaxial growth; nanostructured materials; photoluminescence; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; AFM; GaAs; In0.48Ga0.52P; InP; RHEED; atomic force microscopy; cross-sectional transmission electron microscopy; embedded islands; islanding onset; nanoscale InP islands; optical characterization; photoluminescence; reflection high energy electron diffraction; solid-source molecular beam epitaxy; Atom optics; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Electron optics; Indium phosphide; Molecular beam epitaxial growth; Optical diffraction; Optical reflection; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location
Hokkaido
Print_ISBN
0-7803-2147-2
Type
conf
DOI
10.1109/ICIPRM.1995.522138
Filename
522138
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