DocumentCode
3133453
Title
Bandgap engineering and spatial confinement of optical phonon in ZnO quantum dots
Author
Hsieh, Wen-Feng ; Lin, Kuo-Feng ; Cheng, Hsin-Ming ; Hsu, Hsu-Cheng
Author_Institution
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu
fYear
2006
fDate
Oct. 2006
Firstpage
939
Lastpage
940
Abstract
Upon decreasing size of ZnO quantum dots, the blueshift in bandgap reveals the quantum confinement effect and the diminishing ratio of the second- to first-order resonant Raman intensity reveals reducing the electron-phonon Frohlich interaction
Keywords
II-VI semiconductors; Raman spectra; electron-phonon interactions; energy gap; phonons; semiconductor quantum dots; spectral line shift; zinc compounds; ZnO; ZnO quantum dots; bandgap engineering; blueshift; electron-phonon Frohlich interaction; optical phonon; quantum confinement effect; second-first-order resonant Raman intensity; spatial confinement; Heating; Optical scattering; Phonons; Photonic band gap; Quantum dot lasers; Quantum dots; Raman scattering; Resonance; Temperature; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location
Montreal, Que.
Print_ISBN
0-7803-9555-7
Electronic_ISBN
0-7803-9555-7
Type
conf
DOI
10.1109/LEOS.2006.279156
Filename
4054498
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