Series resistance and effective channel mobility degradation in LDD nMOSFETs under hot-carrier stressing

Author

Oh, G.G. ; Chim, W.K. ; Chan, D.S.H. ; Lou, C.L.

Author_Institution

Centre for Integrated Circuit Failure Analysis & Reliability, Nat. Univ. of Singapore, Singapore

fYear

1999

fDate

1999

Firstpage

99

Lastpage

103

Abstract

With the ability to independently extract the series drain resistance and effective channel mobility from a single MOSFET device, the individual effect of these two parameters on the hot-carrier degradation in graded-drain nMOSFETs was separated and investigated. A self-limiting behaviour due to trapped charge and interface state generation was observed. A three-stage degradation model was proposed to explain the observed hot-carrier degradation behaviour

Keywords

MOSFET; carrier mobility; electric resistance; electron traps; hole traps; hot carriers; semiconductor device measurement; semiconductor device models; semiconductor device reliability; LDD nMOSFETs; MOSFET; effective channel mobility; effective channel mobility degradation; graded-drain nMOSFETs; hot-carrier degradation; hot-carrier degradation behaviour; hot-carrier stressing; interface state generation; self-limiting behaviour; series drain resistance; series resistance degradation; three-stage degradation model; trapped charge; Degradation; Failure analysis; Hot carrier effects; Hot carriers; Integrated circuit reliability; Life estimation; Lifetime estimation; MOSFETs; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 1999. Proceedings of the 1999 7th International Symposium on the

Print_ISBN

0-7803-5187-8

Type

conf

DOI

10.1109/IPFA.1999.791314

Filename

791314