Physical analysis and modeling of the reliability of AlGaAs-GaAs HBTs

Author

Liou, J.J. ; Rezazadeh, A.A.

Author_Institution

Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA

fYear

1999

fDate

1999

Firstpage

173

Lastpage

179

Abstract

This paper provides an analysis of the physical mechanisms underlying the long-term base current instability in the AlGaAs-GaAs heterojunction bipolar transistor (HBT). Such a current instability gives rise to HBT long-term current gain drift and thus is a major concern for HBT reliability. In this paper, a detailed analysis for two frequently seen base current instabilities is presented. This is followed by the development of a semi-empirical model for predicting the HBT mean time to failure (MTTF)

Keywords

III-V semiconductors; aluminium compounds; electric current; failure analysis; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; semiconductor device reliability; stability; AlGaAs-GaAs; AlGaAs-GaAs HBTs; AlGaAs-GaAs heterojunction bipolar transistor; HBT MTTF; HBT long-term current gain drift; HBT mean time to failure; HBT reliability; base current instability; current instability; long-term base current instability; modeling; physical analysis; physical mechanisms; reliability; semi-empirical model; Circuit testing; Cutoff frequency; Gallium arsenide; Heterojunction bipolar transistors; Phased arrays; Predictive models; Reliability engineering; Temperature; Thermal conductivity; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 1999. Proceedings of the 1999 7th International Symposium on the

Print_ISBN

0-7803-5187-8

Type

conf

DOI

10.1109/IPFA.1999.791329

Filename

791329