Energy dependence of interface trap density-investigated by the DCIV method [MOSFETs]

Author

Jie, B.B. ; Li, M.-F. ; Lo, K.F.

Author_Institution

Centre for Integrated Circuit Failure Analysis & Reliability, Nat. Univ. of Singapore, Singapore

fYear

1999

fDate

1999

Firstpage

206

Lastpage

209

Abstract

Based on DC current-voltage (DCIV) measurements, a new method is proposed for evaluation of the energy dependence of interface trap density in deep sub-μm MOSFETs. An emitter forward bias V_eb dependent parameter N_EFF(V_eb) is introduced and is calculated from the magnitude of the DCIV spectrum peak. The energy dependence of the interface trap density can be acquired from comparing the experimental and theoretical N_EFF(V_eb) curves using least squares optimisation. The method is illustrated with a 0.4 μm channel length pMOSFET subject to Fowler-Nordheim stressing

Keywords

MOSFET; electron traps; electronic density of states; hole traps; interface states; least squares approximations; optimisation; semiconductor device measurement; semiconductor device models; 0.4 micron; DC I-V measurements; DC current-voltage measurements; DCIV method; DCIV spectrum peak; Fowler-Nordheim stressing; MOSFETs; channel length; emitter forward bias dependent parameter; energy dependence; interface trap density; least squares optimisation; pMOSFET; Charge carrier processes; Current measurement; Density measurement; Electron traps; Energy capture; Energy measurement; Failure analysis; Radiative recombination; Spontaneous emission; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 1999. Proceedings of the 1999 7th International Symposium on the

Print_ISBN

0-7803-5187-8

Type

conf

DOI

10.1109/IPFA.1999.791335

Filename

791335