SPICE-based DC and microwave characterization of InAlAs/InGaAs HBTs used for large-bandwidth integrated transimpedance amplifiers

Author

Yang, K. ; Gutierrez-Aitken, A.L. ; Zhang, X. ; Haddad, G.I. ; Bhattacharya, P.

Author_Institution

Center for High Frequency Microelectron., Michigan Univ., Ann Arbor, MI, USA

fYear

1995

fDate

9-13 May 1995

Firstpage

448

Lastpage

451

Abstract

The DC and small-signal microwave performance of InAlAs/InGaAs single HBTs (SHBTs) used for large-bandwidth monolithically integrated transimpedance amplifiers is characterized based on a new HBT model built in SPICE. Several effects observed from InGaAs SHBTs, which are not accounted for in the conventional Gummel-Poon BJT model, are modeled through a macromodeling approach. The developed HBT model accompanied by a detailed parameter-extraction process predicts accurately measured DC and AC characteristics of the HBTs and transimpedance amplifiers

Keywords

III-V semiconductors; MMIC amplifiers; SPICE; aluminium compounds; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave amplifiers; microwave bipolar transistors; semiconductor device models; wideband amplifiers; 17 to 19 GHz; AC characteristics; DC characterization; HBT model; InAlAs-InGaAs; InAlAs/InGaAs HBTs; SPICE; common emitter output characteristics; forward Gummel plot; gain frequency characteristics; large-bandwidth monolithically integrated transimpedance amplifiers; macromodeling approach; parameter-extraction process; small-signal microwave performance; soft breakdown characteristics; Capacitance; Circuits; Frequency measurement; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Microwave amplifiers; Molecular beam epitaxial growth; Performance analysis; SPICE;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522176

Filename

522176