Characterization of surface recombination velocity of InP reduced by sulfur-treatment and a phosphorous-nitride film formation with Raman spectroscopy

Author

Hanajiri, T. ; Matsumoto, Y. ; Sugano, T. ; Katoda, T.

Author_Institution

Dept. of Electr. & Electron. Eng., Toyo Univ., Saitama, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

585

Lastpage

588

Abstract

Surface recombination velocity of InP was reduced by the process including surface treatment using (NH₄)₂S_x solution (sulfur-treatment), annealing in vacuum and formation of a phosphorous-nitride (PN) film by photon-assisted chemical vapor deposition (PA-CVD). The minimum value of surface recombination velocity was 4.1-4.8×10³ (cm/s). Laser Raman spectroscopy was used for characterizing surface recombination velocity

Keywords

Auger effect; III-V semiconductors; Raman spectra; X-ray photoelectron spectra; annealing; bonds (chemical); chemical vapour deposition; dangling bonds; indium compounds; passivation; reduction (chemical); semiconductor-insulator boundaries; surface recombination; surface states; (NH₄)₂S_x solution; 1.3*10⁴ to 2*10⁴ cm/s; 150 C; 320 to 460 cm^-1; Auger electron spectra; III-V semiconductor; InP; InP-PN; Raman spectroscopy; S treatment reduced; XPS; annealing in vacuum; chemical bond changes; chemical shift; dangling bonds termination; excess photoexcited carriers; insulator films; nitride film formation; passivation; photon-assisted CVD; polished wafers; surface recombination velocity; surface treatment; Annealing; Chemicals; FETs; Indium phosphide; Optical surface waves; Radiative recombination; Raman scattering; Spectroscopy; Spontaneous emission; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522211

Filename

522211