• DocumentCode
    3135450
  • Title

    Measurement and characterization of HEMT dynamics

  • Author

    Parker, Anthony E. ; Rathmell, James G.

  • Author_Institution
    Dept. of Electron., Macquarie Univ., North Ryde, NSW, Australia
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    846
  • Lastpage
    849
  • Abstract
    Large-signal dynamic behaviour of HEMTs is characterized for all bias points by bias-dependent pinch-off, gain, and drain feedback parameters. A novel drain current model uses these parameters to describe the dispersion effects. The model and parameters, presented here, give an insight into the operation of HEMTs
  • Keywords
    high electron mobility transistors; microwave field effect transistors; semiconductor device measurement; semiconductor device models; HEMT characterization; HEMT dynamics; bias points; bias-dependent pinchoff parameters; dispersion effects; drain current model; drain feedback parameters; gain parameters; large-signal dynamic behaviour; Current measurement; Dispersion; Electrons; Feedback; HEMTs; Intrusion detection; Power dissipation; Pulse measurements; Temperature; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2000 Asia-Pacific
  • Conference_Location
    Sydney, NSW
  • Print_ISBN
    0-7803-6435-X
  • Type

    conf

  • DOI
    10.1109/APMC.2000.925962
  • Filename
    925962
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3135450