• DocumentCode
    3138168
  • Title

    Progress in reactive ion etching of epitaxial GaN

  • Author

    Karouta, F. ; Vreugdewater, P. ; Jacobs, B. ; van Roy, B.H. ; Schoen, O. ; Protzmann, H. ; Heuken, M.

  • Author_Institution
    Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    171
  • Lastpage
    174
  • Abstract
    Reactive Ion Etching (RIE) of GaN epitaxially grown on (0001) sapphire substrate has been investigated using various chemistries based on SiCl4, Ar and SF6. Plasma deposited SiNx is used for masking. We studied the influence of gas flow, pressure and RF-power on etch rate and morphology. High etch rates up to 150 nm/min can be obtained when using SIC4:Ar:SF6 (10:10:2 sccm) at an acceleration voltage of 370 Volts. Very smooth surfaces and good etch rates (±100 nm/min) were obtained using the same chemistry at a lower RF-power of 105 Watts (DC-bias of ±290 V)
  • Keywords
    III-V semiconductors; gallium compounds; semiconductor epitaxial layers; sputter etching; wide band gap semiconductors; (0001) sapphire substrate; 105 W; 290 V; 370 V; GaN; GaN epitaxial layer; reactive ion etching; Argon; Etching; Fluid flow; Gallium nitride; Morphology; Plasma applications; Plasma chemistry; Silicon carbide; Silicon compounds; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
  • Conference_Location
    Perth, WA
  • Print_ISBN
    0-7803-4513-4
  • Type

    conf

  • DOI
    10.1109/COMMAD.1998.791612
  • Filename
    791612
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3138168