In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption

Author

Hwang, Heedon ; Lee, Tae-Wan ; Moon, Youngboo ; Yoon, Euijoon ; Kim, Young Dong

Author_Institution

Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea

fYear

1999

fDate

1999

Firstpage

268

Lastpage

271

Abstract

InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, the As/P exchange reaction and As carryover were monitored in-situ by surface photoabsorption. We simulated the measured SPA signal using a multilayer model and effective medium theory to obtain the As compositional profile which was carried over into the InP layer

Keywords

III-V semiconductors; MOCVD; chemical exchanges; indium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; visible spectra; As carryover; As compositional profile; As/P exchange reaction; InAs-InP; effective medium theory; low pressure MOCVD; multilayer model; quantum well structures; surface photoabsorption; Application specific processors; Ash; Chemical vapor deposition; Electrons; Indium phosphide; Monitoring; Nonhomogeneous media; Organic chemicals; Strain control; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on

Conference_Location

Perth, WA

Print_ISBN

0-7803-4513-4

Type

conf

DOI

10.1109/COMMAD.1998.791638

Filename

791638