A 0.15 /spl mu/m KrF lithography for 1 Gb DRAM product using highly printable patterns and thin resist process

Author

Ozaki, T. ; Azuma, T. ; Itoh, M. ; Kawamura, D. ; Tanaka, S. ; Ishibashi, Y. ; Shiratake, S. ; Kyoh, S. ; Kondoh, T. ; Inoue, S. ; Tsuchida, K. ; Kohyama, Y. ; Onishi, Y.

Author_Institution

Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan

fYear

1998

fDate

9-11 June 1998

Firstpage

84

Lastpage

85

Abstract

In order to realize the 1 Gbit DRAM product, 0.15 /spl mu/m photolithography will be necessary. Recently, off-axis illuminations and phase shift masks have been studied for realizing 0.175-0.25 /spl mu/m lithography. Even if these technologies are used, 0.15 /spl mu/m lithography is difficult. Investigating various lithographic approaches by optical simulation including the effect of photoresist processing, we found that a thin resist (300 nm thick), highly printable memory cell patterns, and optical proximity correction are very useful for realizing the 0.15 /spl mu/m rule DRAMs with KrF laser stepper (NA=0.6).

Keywords

DRAM chips; laser materials processing; phase shifting masks; photoresists; proximity effect (lithography); semiconductor process modelling; 0.15 mum; 1 Gbit; 300 nm; DRAM; KrF; KrF laser stepper; KrF lithography; highly printable memory cell patterns; highly printable patterns; off-axis illumination; optical proximity correction; optical simulation; phase shift masks; photolithography; photoresist processing; thin resist process; Capacitors; Dry etching; Laboratories; Lighting; Lithography; Microelectronics; Plugs; Random access memory; Resists; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-4770-6

Type

conf

DOI

10.1109/VLSIT.1998.689209

Filename

689209