DocumentCode
3139110
Title
TEM measurement of Al profiles in interdiffused GaAs/AlGaAs quantum-wells
Author
Zou, J. ; Cai, D.Q. ; Cockayne, D.J.H. ; Yuan, S. ; Jagadish, C.
Author_Institution
Key Centre for Microscopy & Microanalysis, Sydney Univ., NSW, Australia
fYear
1999
fDate
1999
Firstpage
358
Lastpage
360
Abstract
In this paper, we demonstrate the application of thickness fringe imaging technique to determine the quantum well profile in an interdiffused GaAsAl/GaAs quantum well heterostructure
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor quantum wells; surface diffusion; transmission electron microscopy; Al profiles; GaAs-AlGaAs; TEM measurement; interdiffused GaAs/AlGaAs quantum-wells; thickness fringe imaging technique; Electron microscopy; Gallium arsenide; High-resolution imaging; Quantum well lasers; Quantum wells; Semiconductor lasers; Semiconductor superlattices; Shape; Transmission electron microscopy; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location
Perth, WA
Print_ISBN
0-7803-4513-4
Type
conf
DOI
10.1109/COMMAD.1998.791662
Filename
791662
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