A 50-GHz 0.25-/spl mu/m high-energy implanted BiCMOS (HEIBiC) technology for Low-Power high-integration wireless-communication systems

Author

Yih-Feng Chyan ; Ivanov, T.G. ; Carroll, M.S. ; Nagy, W.J. ; Chen, A.S. ; Lee, K.H.

Author_Institution

Bell Lab., Lucent Technol., Orlando, FL, USA

fYear

1998

fDate

9-11 June 1998

Firstpage

92

Lastpage

93

Abstract

A 0.25-/spl mu/m modular high-energy implanted BiCMOS (HEIBiC) technology has been developed for high-integration wireless-communication systems. It integrates an RF bipolar transistor into the CMOS process without disturbing the CMOS device characteristics. HEIBiC technology utilizes implantation to form the base, collector and CMOS tubs. This single-poly emitter npn transistor demonstrates an f/sub T/=52 GHz for 2.5 V devices and an f/sub T/BV/sub CEO/ product of 171 GHz-V for 3.3 V devices. The performance of HEIBiC technology is competitive with the best reported in the literature.

Keywords

BiCMOS integrated circuits; cellular radio; ion implantation; millimetre wave integrated circuits; semiconductor doping; 0.25 mum; 171 GHz; 2.5 V; 3.3 V; 50 GHz; 52 GHz; CMOS process; CMOS tubs; HEIBiC technology; RF bipolar transistor; Si; base; collector; high-energy implanted BiCMOS technology; implantation; low-power high-integration wireless-communication systems; single-poly emitter npn transistor; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Costs; Energy consumption; Integrated circuit technology; Ion implantation; RF signals; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-4770-6

Type

conf

DOI

10.1109/VLSIT.1998.689212

Filename

689212