DocumentCode
3140966
Title
Preparation and properties of lanthanum modified PbTiO3 thin films by rf-magnetron sputtering
Author
Iijima, K. ; Takeuchi, T. ; Nagao, N. ; Takayama, R. ; Ueda, I.
Author_Institution
Central Res. Labs., Matsushita Electr. Ind. Co. Ltd., Kyoto, Japan
fYear
1991
fDate
33457
Firstpage
53
Lastpage
58
Abstract
Highly c-axis oriented Pb1-xLaxTi1-x/4 O3 (PLT) thin films were prepared by rf-magnetron sputtering on (100)MgO and (100)Pt/MgO substrate. These films were characterized by X-ray and electron diffraction and electron microscope. Thin film growth manner and c-axis orientation mechanism were discussed, Dielectric measurement revealed the phase transition behavior of PLT thin films. PLT thin film of x=0.15 shows an extremely large pyroelectric coefficient of 9.5×10-8 C/cm2 K and low dielectric constant of 330
Keywords
X-ray diffraction; dielectric losses; electron diffraction; electron microscopy; ferroelectric materials; ferroelectric thin films; ferroelectric transitions; lanthanum compounds; lead compounds; permittivity; pyroelectricity; sputter deposition; (100)MgO substrate; (100)Pt/MgO substrate; MgO; PLT thin films; Pb1-xLaxTi1-x4/O3; PbLaTiO3; Pt; Pt-MgO; RF magnetron sputtering; X-ray diffraction; dielectric constant; dielectric measurement; electron diffraction; electron microscopy; highly c-axis oriented films; phase transition behavior; preparation; properties; pyroelectric coefficient; Dielectric thin films; Electrons; Ferroelectric materials; Lanthanum; Optical films; Pyroelectricity; Sputtering; Substrates; Transistors; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location
University Park, PA
Print_ISBN
0-7803-1847-1
Type
conf
DOI
10.1109/ISAF.1994.522296
Filename
522296
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