Design and implementation of an inverse class-F power amplifier with 79 % efficiency by using a switch-based active device model

Author

Aflaki, Pouya ; Negra, Renato ; Ghannouchi, Fadhel M.

Author_Institution

Univ. of Calgary, Calgary

fYear

2008

fDate

22-24 Jan. 2008

Firstpage

423

Lastpage

426

Abstract

This paper presents the design and implementation of an inverse class-F power amplifier using a commercially available GaN 2 W power transistor. A switch-based model for this transistor was implemented in ADS and used to design this high efficiency amplifier. Simulation results with the developed model show drain efficiency of 79%, more than 19 dB of large-signal gain for an output power of greater than 5 W at 1 GHz. These values are confirmed by measurements, showing the usefulness of the switch-based active device model for this type of switching-mode power amplifiers.

Keywords

III-V semiconductors; UHF power amplifiers; gallium compounds; switching circuits; wide band gap semiconductors; ADS; GaN; efficiency 79 percent; frequency 1 GHz; inverse class-F power amplifier; large-signal gain; power 2 W; power amplifier design; power transistor; switch-based active device model; switching-mode power amplifiers; Design engineering; Gallium nitride; Impedance; Linearity; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Switches; Transmitters; Voltage; GaN HEMT; Power amplifier; high efficiency; inverse class-F PA; switching-mode;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Symposium, 2008 IEEE

Conference_Location

Orlando, FL

Print_ISBN

978-1-4244-1462-8

Electronic_ISBN

978-1-4244-1463-5

Type

conf

DOI

10.1109/RWS.2008.4463519

Filename

4463519