• DocumentCode
    3141852
  • Title

    Characteristics of the Power Electronics Equipments applying the SiC power devices

  • Author

    Matsumoto, Yasushi ; Yamada, Ryuji ; Kondo, Yasushi ; Ikeda, Yoshinari ; Kimura, Hiroshi

  • Author_Institution
    Fuji Electric Co., Ltd. Corporate R&D Headquarters Hino, Tokyo, Japan
  • fYear
    2012
  • fDate
    3-5 July 2012
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Power Electronics Equipments applying superior characteristics Silicon Carbide (SiC) power semiconductors have been researching and developing. Applying the hybrid modules using Si-IGBT and SiC-SBD (Schottky Barrier Diode) to the motor drive inverter enables reduction of the loss 25% of the inverter part. Moreover applying the All-SiC modules using SiC-MOSFET and SiC-SBD to the solar inverter enables to be the efficiency of the main circuit unit 99%, and to be the volume of the equipment 25% to conventional one.
  • Keywords
    MOSFET; Motor Drive Inverter; SBD; SiC; Solar Inverter;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Engineering and Renewable Energy (ICPERE), 2012 International Conference on
  • Conference_Location
    Bali, Indonesia
  • Print_ISBN
    978-1-4673-2468-7
  • Electronic_ISBN
    978-1-4673-2469-4
  • Type

    conf

  • DOI
    10.1109/ICPERE.2012.6287230
  • Filename
    6287230