Equivalent circuit modeling of active frequency selective surfaces

Author

Chang, Kihun ; Kwak, Sang Il ; Yoon, Young Joong

Author_Institution

Yonsei Univ., Seoul

fYear

2008

fDate

22-24 Jan. 2008

Firstpage

663

Lastpage

666

Abstract

In this paper, active frequency selective surfaces (FSS) with squared aperture with loading are described. Active FSS elements using switched PIN diodes are discussed. The unit cell consists of a square aperture element with a metal island loading and one PIN diode placed at the upper gap considering the vertical polarization. The electromagnetic properties of the active FSS structure are changed by applying a dc bias to the substrate, and estimated by the equivalent circuit model of FSS structure and PIN diode. This active FSS design enables transmission to be switched on or off at 2.3 GHz, providing high transmission when the diodes are in off state and high isolation when the diodes are on. Equivalent circuit in the structure is investigated by analyzing transmission and reflection spectra. Measurements on active FSS are compared with numerical calculation based on the scattering matrix formalism. The origin of experimentally observed frequency responses will be scrutinized.

Keywords

equivalent circuits; frequency selective surfaces; matrix algebra; p-i-n diodes; active frequency selective surface; electromagnetic property; equivalent circuit modeling; frequency 2.3 GHz; scattering matrix formalism; square aperture element; switched PIN diode; Apertures; Capacitance; Conducting materials; Dielectric substrates; Equivalent circuits; Frequency estimation; Frequency selective surfaces; Inductors; Reflection; Semiconductor diodes; PIN diode; active FSS; equivalent circuit modeling; frequency selective surfaces;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Symposium, 2008 IEEE

Conference_Location

Orlando, FL

Print_ISBN

978-1-4244-1462-8

Electronic_ISBN

978-1-4244-1463-5

Type

conf

DOI

10.1109/RWS.2008.4463579

Filename

4463579