DocumentCode
3143620
Title
Improvement on erase characteristics of SONOS flash memory by bandgap engineering of tunnel oxide
Author
Li, Dong Hua ; Park, Byung-Gook
Author_Institution
Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Gwanak, South Korea
fYear
2009
fDate
18-22 Oct. 2009
Firstpage
138
Lastpage
140
Abstract
We comparatively analyze the erase speed and long-term reliability between the conventional SONOS flash memory and the bandgap engineered SONOS flash memory devices. As a result, the bandgap engineered SONOS device is indeed proven to provide faster erase speed and better long-term data retention characteristics than the conventional SONOS device.
Keywords
energy gap; flash memories; SONOS flash memory devices; bandgap engineering; erase characteristics; long-term data retention characteristics; tunnel oxide; CMOS technology; Charge carrier processes; Computer science; Electrons; Flash memory; Photonic band gap; Reliability engineering; SONOS devices; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2009. IRW '09. IEEE International
Conference_Location
S. Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
978-1-4244-3921-8
Electronic_ISBN
1930-8841
Type
conf
DOI
10.1109/IRWS.2009.5383011
Filename
5383011
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